FDD5N50NZTM N-Channel MOSFET, 4 A, 500 V UniFET, 3-Pin DPAK ON Semiconductor [FDD5N50NZTM]; 166-1699
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Mã kho: 1661699
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 0.166666666666667 |
| Maximum Drain Source Voltage | 500 V |
| Package Type | DPAK (TO-252) |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 1.5 Ω |
| Channel Mode | Enhancement |
| Minimum Gate Threshold Voltage | 3V |
| Maximum Power Dissipation | 62 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -25 V, +25 V |
| Number of Elements per Chip | 1 |
| Width | 6.22mm |
| Transistor Material | Si |
| Minimum Operating Temperature | -55 °C |
| Typical Gate Charge @ Vgs | 9 nC @ 10 V |
| Length | 6.73mm |
| Maximum Operating Temperature | +150 °C |
| Series | UniFET |
| Height | 2.39mm |