FDD18N20LZ N-Channel MOSFET, 16 A, 200 V UniFET, 3-Pin DPAK ON Semiconductor [FDD18N20LZ]; 166-3429
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Mã kho: 1663429
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 16 A |
| Maximum Drain Source Voltage | 200 V |
| Package Type | DPAK (TO-252) |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 130 mΩ |
| Channel Mode | Enhancement |
| Minimum Gate Threshold Voltage | 3V |
| Maximum Power Dissipation | 89 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Width | 6.22mm |
| Length | 6.73mm |
| Minimum Operating Temperature | -55 °C |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 30 nC @ 10 V |
| Series | UniFET |
| Maximum Operating Temperature | +150 °C |
| Height | 2.39mm |