PMXB360ENEAZ 3 N-Channel MOSFET, 1.1 A, 80 V, 4-Pin DFN1010D-3, SOT1215 Nexperia [PMXB360ENEAZ]; 151-3045
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THÔNG SỐ KỸ THUẬT | |
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Channel Type | N |
Maximum Continuous Drain Current | 1.1 A |
Maximum Drain Source Voltage | 80 V |
Package Type | DFN1010D-3, SOT1215 |
Mounting Type | Surface Mount |
Pin Count | 4 |
Maximum Drain Source Resistance | 887 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 2.7V |
Minimum Gate Threshold Voltage | 1.3V |
Maximum Power Dissipation | 6250 mW |
Transistor Configuration | Single |
Maximum Gate Source Voltage | 20 V |
Number of Elements per Chip | 3 |
Length | 1.15mm |
Width | 1.05mm |
Maximum Operating Temperature | +150 °C |
Height | 0.4mm |
Minimum Operating Temperature | -55 °C |
Typical Gate Charge @ Vgs | 3 nC |
Automotive Standard | AEC-Q101 |