IXFQ60N50P3 N-Channel MOSFET, 60 A, 500 V HiperFET, Polar3, 3-Pin TO-3P IXYS [IXFQ60N50P3]; 146-1755
by IXYS
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Mã kho: 1461755
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THÔNG SỐ KỸ THUẬT | |
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Channel Type | N |
Maximum Continuous Drain Current | 60 A |
Maximum Drain Source Voltage | 500 V |
Package Type | TO-3P |
Mounting Type | Through Hole |
Pin Count | 3 |
Maximum Drain Source Resistance | 100 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 5V |
Maximum Power Dissipation | 1.04 kW |
Transistor Configuration | Single |
Maximum Gate Source Voltage | -30 V, +30 V |
Number of Elements per Chip | 1 |
Transistor Material | Si |
Length | 15.8mm |
Series | HiperFET, Polar3 |
Height | 20.3mm |
Minimum Operating Temperature | -55 °C |
Maximum Operating Temperature | +150 °C |
Width | 4.9mm |
Typical Gate Charge @ Vgs | 96 nC @ 10 V |