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IXFP10N60P N-Channel MOSFET, 10 A, 600 V HiperFET, Polar, 3-Pin TO-220 IXYS [IXFP10N60P]; 194-502
by IXYS
0₫
Mã kho: 194502
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THÔNG SỐ KỸ THUẬT | |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 0.416666666666667 |
Maximum Drain Source Voltage | 600 V |
Package Type | TO-220 |
Mounting Type | Through Hole |
Pin Count | 3 |
Maximum Drain Source Resistance | 740 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 5.5V |
Maximum Power Dissipation | 200 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | -30 V, +30 V |
Number of Elements per Chip | 1 |
Transistor Material | Si |
Maximum Operating Temperature | +150 °C |
Minimum Operating Temperature | -55 °C |
Typical Gate Charge @ Vgs | 32 nC @ 10 V |
Width | 4.83mm |
Height | 9.15mm |
Length | 10.66mm |
Series | HiperFET, Polar |