SPB18P06PGATMA1 P-Channel MOSFET, 18.6 A, 60 V SIPMOS, 3-Pin D2PAK Infineon [SPB18P06PGATMA1]; 165-6651
by Infineon
0₫
Mã kho: 1656651
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THÔNG SỐ KỸ THUẬT | |
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Channel Type | P |
Maximum Continuous Drain Current | 18.6 A |
Maximum Drain Source Voltage | 60 V |
Package Type | D2PAK (TO-263) |
Mounting Type | Surface Mount |
Pin Count | 3 |
Maximum Drain Source Resistance | 130 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 4V |
Minimum Gate Threshold Voltage | 2.1V |
Maximum Power Dissipation | 81.1 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | -20 V, +20 V |
Number of Elements per Chip | 1 |
Transistor Material | Si |
Width | 4.4mm |
Minimum Operating Temperature | -55 °C |
Typical Gate Charge @ Vgs | 21 nC @ 10 V |
Height | 9.25mm |
Series | SIPMOS |
Maximum Operating Temperature | +175 °C |
Length | 10mm |