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IRFS3306PBF N-Channel MOSFET, 160 A, 60 V HEXFET, 3-Pin DPAK Infineon [IRFS3306PBF]; 145-8610
by Infineon
0₫
Mã kho: 1458610
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THÔNG SỐ KỸ THUẬT | |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 160 A |
Maximum Drain Source Voltage | 60 V |
Package Type | DPAK (TO-252) |
Mounting Type | Surface Mount |
Pin Count | 3 |
Maximum Drain Source Resistance | 4 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 4V |
Minimum Gate Threshold Voltage | 2V |
Maximum Power Dissipation | 230 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | -20 V, +20 V |
Number of Elements per Chip | 1 |
Width | 9.65mm |
Minimum Operating Temperature | -55 °C |
Transistor Material | Si |
Length | 4.06mm |
Maximum Operating Temperature | +175 °C |
Series | HEXFET |
Height | 14.61mm |
Typical Gate Charge @ Vgs | 85 nC @ 10 V |