IRFR9N20DTRPBF N-Channel MOSFET, 9.4 A, 200 V HEXFET, 3-Pin DPAK Infineon [IRFR9N20DTRPBF]; 165-8218
by Infineon
0₫
Mã kho: 1658218
Liên hệ để có giá tốt (Vietnam: 0898.332.898, E-mail: SKF@nguyenxuong.com)
THÔNG SỐ KỸ THUẬT | |
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Channel Type | N |
Maximum Continuous Drain Current | 9.4 A |
Maximum Drain Source Voltage | 200 V |
Package Type | DPAK (TO-252) |
Mounting Type | Surface Mount |
Pin Count | 3 |
Maximum Drain Source Resistance | 380 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 5.5V |
Minimum Gate Threshold Voltage | 3V |
Maximum Power Dissipation | 86 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | -30 V, +30 V |
Number of Elements per Chip | 1 |
Typical Gate Charge @ Vgs | 18 nC @ 10 V |
Height | 2.39mm |
Series | HEXFET |
Maximum Operating Temperature | +175 °C |
Minimum Operating Temperature | -55 °C |
Length | 6.73mm |
Forward Diode Voltage | 1.3V |
Transistor Material | Si |
Width | 7.49mm |