IRFR8314TRPBF N-Channel MOSFET, 179 A, 30 V HEXFET, 3-Pin DPAK Infineon [IRFR8314TRPBF]; 165-8287
by Infineon
0₫
Mã kho: 1658287
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THÔNG SỐ KỸ THUẬT | |
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Channel Type | N |
Maximum Continuous Drain Current | 179 A |
Maximum Drain Source Voltage | 30 V |
Package Type | DPAK (TO-252) |
Mounting Type | Surface Mount |
Pin Count | 3 |
Maximum Drain Source Resistance | 3.1 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 2.2V |
Minimum Gate Threshold Voltage | 1.2V |
Maximum Power Dissipation | 125 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | -20 V, +20 V |
Number of Elements per Chip | 1 |
Typical Gate Charge @ Vgs | 36 nC @ 4.5 V |
Minimum Operating Temperature | -55 °C |
Maximum Operating Temperature | +175 °C |
Series | HEXFET |
Height | 2.39mm |
Width | 7.49mm |
Transistor Material | Si |
Forward Diode Voltage | 1V |
Length | 6.73mm |