IRFBA1405PPBF N-Channel MOSFET, 174 A, 55 V HEXFET, 3-Pin TO-273AA Infineon [IRFBA1405PPBF]; 145-8747
by Infineon
0₫
Mã kho: 1458747
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 174 A |
| Maximum Drain Source Voltage | 55 V |
| Package Type | TO-273AA |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 5 mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation | 330 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Minimum Operating Temperature | -40 °C |
| Length | 11mm |
| Forward Diode Voltage | 1.3V |
| Width | 5mm |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 170 nC @ 10 V |
| Height | 15mm |
| Maximum Operating Temperature | +175 °C |
| Series | HEXFET |