IRFB4332PBF N-Channel MOSFET, 60 A, 250 V HEXFET, 3-Pin TO-220AB Infineon [IRFB4332PBF]; 495-562
by Infineon
0₫
Mã kho: 495562
Liên hệ để có giá tốt (Vietnam: 0898.332.898, E-mail: SKF@nguyenxuong.com)
| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 60 A |
| Maximum Drain Source Voltage | 250 V |
| Package Type | TO-220AB |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 33 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 5V |
| Minimum Gate Threshold Voltage | 3V |
| Maximum Power Dissipation | 390 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -30 V, +30 V |
| Number of Elements per Chip | 1 |
| Series | HEXFET |
| Height | 9.02mm |
| Length | 10.66mm |
| Transistor Material | Si |
| Maximum Operating Temperature | +175 °C |
| Minimum Operating Temperature | -40 °C |
| Typical Gate Charge @ Vgs | 99 nC @ 10 V |
| Width | 4.82mm |