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IRF7832PBF N-Channel MOSFET, 20 A, 30 V HEXFET, 8-Pin SOIC Infineon [IRF7832PBF]; 165-7576
by Infineon
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Mã kho: 1657576
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THÔNG SỐ KỸ THUẬT | |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 20 A |
Maximum Drain Source Voltage | 30 V |
Package Type | SOIC |
Mounting Type | Surface Mount |
Pin Count | 8 |
Maximum Drain Source Resistance | 4.8 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 2.32V |
Minimum Gate Threshold Voltage | 1.39V |
Maximum Power Dissipation | 2.5 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | -20 V, +20 V |
Number of Elements per Chip | 1 |
Minimum Operating Temperature | -55 °C |
Width | 4mm |
Transistor Material | Si |
Length | 5mm |
Maximum Operating Temperature | +155 °C |
Typical Gate Charge @ Vgs | 34 nC @ 4.5 V |
Height | 1.5mm |
Series | HEXFET |