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IRF135S203 N-Channel MOSFET, 129 A, 135 V HEXFET, 3-Pin D2PAK Infineon [IRF135S203]; 130-0937
by Infineon
0₫
Mã kho: 1300937
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THÔNG SỐ KỸ THUẬT | |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 129 A |
Maximum Drain Source Voltage | 135 V |
Package Type | D2PAK (TO-263) |
Mounting Type | Surface Mount |
Pin Count | 3 |
Maximum Drain Source Resistance | 8.4 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 4V |
Minimum Gate Threshold Voltage | 2V |
Maximum Power Dissipation | 441 W |
Maximum Gate Source Voltage | -20 V, +20 V |
Number of Elements per Chip | 1 |
Forward Diode Voltage | 1.3V |
Minimum Operating Temperature | -55 °C |
Series | HEXFET |
Width | 4.83mm |
Height | 9.65mm |
Typical Gate Charge @ Vgs | 180 nC @ 10 V |
Maximum Operating Temperature | +175 °C |
Length | 10.67mm |