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IRF1010EPBF N-Channel MOSFET, 84 A, 60 V HEXFET, 3-Pin TO-220AB Infineon [IRF1010EPBF]; 541-1714
by Infineon
0₫
Mã kho: 5411714
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THÔNG SỐ KỸ THUẬT | |
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Channel Type | N |
Maximum Continuous Drain Current | 84 A |
Maximum Drain Source Voltage | 60 V |
Package Type | TO-220AB |
Mounting Type | Through Hole |
Pin Count | 3 |
Maximum Drain Source Resistance | 12 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 4V |
Minimum Gate Threshold Voltage | 2V |
Maximum Power Dissipation | 200 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | -20 V, +20 V |
Number of Elements per Chip | 1 |
Transistor Material | Si |
Minimum Operating Temperature | -55 °C |
Typical Gate Charge @ Vgs | 130 nC @ 10 V |
Height | 8.77mm |
Series | HEXFET |
Maximum Operating Temperature | +175 °C |
Width | 4.69mm |
Length | 10.54mm |