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IPP048N12N3GXKSA1 N-Channel MOSFET, 100 A, 120 V OptiMOS 3, 3-Pin TO-220 Infineon [IPP048N12N3GXKSA1]; 145-8728
by Infineon
0₫
Mã kho: 1458728
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THÔNG SỐ KỸ THUẬT | |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 100 A |
Maximum Drain Source Voltage | 120 V |
Package Type | TO-220 |
Mounting Type | Through Hole |
Pin Count | 3 |
Maximum Drain Source Resistance | 4.8 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 4V |
Minimum Gate Threshold Voltage | 2V |
Maximum Power Dissipation | 300 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | -20 V, +20 V |
Number of Elements per Chip | 1 |
Minimum Operating Temperature | -55 °C |
Series | OptiMOS 3 |
Maximum Operating Temperature | +175 °C |
Typical Gate Charge @ Vgs | 137 nC |
Length | 10.36mm |
Forward Diode Voltage | 1.2V |
Transistor Material | Si |
Height | 15.95mm |
Width | 4.57mm |