![Infineon IPP041N12N3GXKSA1 1459320](http://nguyenxuong.com/cdn/shop/products/R8977311-01_3b973c64-3ef5-4104-bafc-3da4cbd9d033_444x277.jpg?v=1594397467)
IPP041N12N3GXKSA1 N-Channel MOSFET, 120 A, 120 V OptiMOS 3, 3-Pin TO-220 Infineon [IPP041N12N3GXKSA1]; 145-9320
by Infineon
0₫
Mã kho: 1459320
Liên hệ để có giá tốt (Vietnam: 0898.332.898, E-mail: SKF@nguyenxuong.com)
THÔNG SỐ KỸ THUẬT | |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 120 A |
Maximum Drain Source Voltage | 120 V |
Package Type | TO-220 |
Mounting Type | Through Hole |
Pin Count | 3 |
Maximum Drain Source Resistance | 4.1 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 4V |
Minimum Gate Threshold Voltage | 2V |
Maximum Power Dissipation | 300 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | -20 V, +20 V |
Number of Elements per Chip | 1 |
Width | 4.57mm |
Minimum Operating Temperature | -55 °C |
Series | OptiMOS 3 |
Maximum Operating Temperature | +175 °C |
Transistor Material | Si |
Forward Diode Voltage | 1.2V |
Length | 10.36mm |
Typical Gate Charge @ Vgs | 158 nC |
Height | 15.95mm |