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IPN50R3K0CEATMA1 N-Channel MOSFET, 2.6 A, 550 V CoolMOS CE, 3+Tab-Pin SOT-223 Infineon [IPN50R3K0CEATMA1]; 130-0913
by Infineon
0₫
Mã kho: 1300913
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THÔNG SỐ KỸ THUẬT | |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 2.6 A |
Maximum Drain Source Voltage | 550 V |
Package Type | SOT-223 |
Mounting Type | Surface Mount |
Pin Count | 3 + Tab |
Maximum Drain Source Resistance | 3 Ω |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 3.5V |
Minimum Gate Threshold Voltage | 2.5V |
Maximum Power Dissipation | 5 W |
Maximum Gate Source Voltage | -30 V, +30 V |
Number of Elements per Chip | 1 |
Forward Diode Voltage | 0.83V |
Minimum Operating Temperature | -40 °C |
Width | 3.7mm |
Series | CoolMOS CE |
Height | 1.7mm |
Maximum Operating Temperature | +150 °C |
Length | 6.7mm |
Typical Gate Charge @ Vgs | 4.3 nC @ 10 V |