IPI086N10N3GXKSA1 N-Channel MOSFET, 80 A, 100 V OptiMOS 3, 3-Pin I2PAK Infineon [IPI086N10N3GXKSA1]; 145-9306
by Infineon
0₫
Mã kho: 1459306
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 80 A |
| Maximum Drain Source Voltage | 100 V |
| Package Type | I2PAK (TO-262) |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 15.4 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 3.5V |
| Minimum Gate Threshold Voltage | 2V |
| Maximum Power Dissipation | 125 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Forward Diode Voltage | 1.2V |
| Minimum Operating Temperature | -55 °C |
| Width | 4.572mm |
| Length | 10.36mm |
| Typical Gate Charge @ Vgs | 42 nC @ 10 V |
| Height | 11.177mm |
| Series | OptiMOS 3 |
| Transistor Material | Si |
| Maximum Operating Temperature | +175 °C |