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IPG20N06S4L26ATMA1 Dual N-Channel MOSFET, 20 A, 60 V OptiMOS, 8-Pin TDSON Infineon [IPG20N06S4L26ATMA1]; 166-0823
by Infineon
0₫
Mã kho: 1660823
Liên hệ để có giá tốt (Vietnam: 0898.332.898, E-mail: SKF@nguyenxuong.com)
THÔNG SỐ KỸ THUẬT | |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 20 A |
Maximum Drain Source Voltage | 60 V |
Package Type | TDSON |
Mounting Type | Surface Mount |
Pin Count | 8 |
Maximum Drain Source Resistance | 46 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 2.2V |
Minimum Gate Threshold Voltage | 1.2V |
Maximum Power Dissipation | 33 W |
Transistor Configuration | Isolated |
Maximum Gate Source Voltage | -16 V, +16 V |
Number of Elements per Chip | 2 |
Minimum Operating Temperature | -55 °C |
Width | 5.9mm |
Transistor Material | Si |
Height | 0.75mm |
Series | OptiMOS |
Maximum Operating Temperature | +175 °C |
Length | 5.15mm |
Typical Gate Charge @ Vgs | 15 nC @ 10 V |
Forward Diode Voltage | 1.3V |