IPG20N06S4L26ATMA1 Dual N-Channel MOSFET, 20 A, 60 V OptiMOS, 8-Pin TDSON Infineon [IPG20N06S4L26ATMA1]; 110-9095
by Infineon
0₫
Mã kho: 1109095
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 20 A |
| Maximum Drain Source Voltage | 60 V |
| Package Type | TDSON |
| Mounting Type | Surface Mount |
| Pin Count | 8 |
| Maximum Drain Source Resistance | 46 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 2.2V |
| Minimum Gate Threshold Voltage | 1.2V |
| Maximum Power Dissipation | 33 W |
| Transistor Configuration | Isolated |
| Maximum Gate Source Voltage | -16 V, +16 V |
| Number of Elements per Chip | 2 |
| Width | 5.9mm |
| Height | 0.75mm |
| Series | OptiMOS |
| Transistor Material | Si |
| Maximum Operating Temperature | +175 °C |
| Length | 5.15mm |
| Minimum Operating Temperature | -55 °C |
| Typical Gate Charge @ Vgs | 15 nC @ 10 V |
| Forward Diode Voltage | 1.3V |