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IPG20N06S2L35ATMA1 N-Channel MOSFET, 20 A, 55 V OptiMOS, 8-Pin TDSON Infineon [IPG20N06S2L35ATMA1]; 165-5988
by Infineon
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Mã kho: 1655988
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THÔNG SỐ KỸ THUẬT | |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 20 A |
Maximum Drain Source Voltage | 55 V |
Package Type | TDSON |
Mounting Type | Surface Mount |
Pin Count | 8 |
Maximum Drain Source Resistance | 44 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 2.2V |
Minimum Gate Threshold Voltage | 1.2V |
Maximum Power Dissipation | 65 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | -20 V, +20 V |
Number of Elements per Chip | 1 |
Transistor Material | Si |
Length | 5.15mm |
Width | 5.9mm |
Minimum Operating Temperature | -55 °C |
Height | 1mm |
Series | OptiMOS |
Maximum Operating Temperature | +175 °C |
Typical Gate Charge @ Vgs | 18 nC @ 10 V |