IPB019N06L3GATMA1 N-Channel MOSFET, 120 A, 60 V OptiMOS 3, 3-Pin D2PAK Infineon [IPB019N06L3GATMA1]; 165-5688
by Infineon
0₫
Mã kho: 1655688
Liên hệ để có giá tốt (Vietnam: 0898.332.898, E-mail: SKF@nguyenxuong.com)
THÔNG SỐ KỸ THUẬT | |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 120 A |
Maximum Drain Source Voltage | 60 V |
Package Type | D2PAK (TO-263) |
Mounting Type | Surface Mount |
Pin Count | 3 |
Maximum Drain Source Resistance | 3 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 2.2V |
Minimum Gate Threshold Voltage | 1.2V |
Maximum Power Dissipation | 250 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | -20 V, +20 V |
Number of Elements per Chip | 1 |
Transistor Material | Si |
Width | 9.45mm |
Minimum Operating Temperature | -55 °C |
Height | 4.57mm |
Series | OptiMOS 3 |
Maximum Operating Temperature | +175 °C |
Length | 10.31mm |
Typical Gate Charge @ Vgs | 125 nC @ 4.5 V |