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BUZ30AHXKSA1 N-Channel MOSFET, 21 A, 200 V SIPMOS, 3-Pin TO-220 Infineon [BUZ30AHXKSA1]; 298-342
by Infineon
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Mã kho: 298342
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THÔNG SỐ KỸ THUẬT | |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 21 A |
Maximum Drain Source Voltage | 200 V |
Package Type | TO-220 |
Mounting Type | Through Hole |
Pin Count | 3 |
Maximum Drain Source Resistance | 130 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 4V |
Minimum Gate Threshold Voltage | 2.1V |
Maximum Power Dissipation | 125 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | -20 V, +20 V |
Number of Elements per Chip | 1 |
Height | 9.25mm |
Series | SIPMOS |
Maximum Operating Temperature | +150 °C |
Length | 10mm |
Width | 4.4mm |
Transistor Material | Si |
Minimum Operating Temperature | -55 °C |