BSZ086P03NS3EGATMA1 P-Channel MOSFET, 40 A, 30 V OptiMOS P, 8-Pin TSDSON Infineon [BSZ086P03NS3EGATMA1]; 165-6879
by Infineon
0₫
Mã kho: 1656879
Liên hệ để có giá tốt (Vietnam: 0898.332.898, E-mail: SKF@nguyenxuong.com)
THÔNG SỐ KỸ THUẬT | |
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Channel Type | P |
Maximum Continuous Drain Current | 40 A |
Maximum Drain Source Voltage | 30 V |
Package Type | TSDSON |
Mounting Type | Surface Mount |
Pin Count | 8 |
Maximum Drain Source Resistance | 13.4 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 1.9V |
Minimum Gate Threshold Voltage | 3.1V |
Maximum Power Dissipation | 69 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | -25 V, +25 V |
Number of Elements per Chip | 1 |
Length | 3.4mm |
Maximum Operating Temperature | +150 °C |
Series | OptiMOS P |
Height | 1.1mm |
Transistor Material | Si |
Width | 3.4mm |
Minimum Operating Temperature | -55 °C |
Typical Gate Charge @ Vgs | 43.2 nC @ 10 V |