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BSC072N03LDGATMA1 Dual N-Channel MOSFET, 20 A, 30 V OptiMOS 3, 8-Pin TDSON Infineon [BSC072N03LDGATMA1]; 165-6890
by Infineon
0₫
Mã kho: 1656890
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THÔNG SỐ KỸ THUẬT | |
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Channel Type | N |
Maximum Continuous Drain Current | 20 A |
Maximum Drain Source Voltage | 30 V |
Package Type | TDSON |
Mounting Type | Surface Mount |
Pin Count | 8 |
Maximum Drain Source Resistance | 9.4 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 2.2V |
Minimum Gate Threshold Voltage | 1V |
Maximum Power Dissipation | 57 W |
Transistor Configuration | Isolated |
Maximum Gate Source Voltage | -20 V, +20 V |
Number of Elements per Chip | 2 |
Width | 6.15mm |
Length | 5.15mm |
Minimum Operating Temperature | -55 °C |
Maximum Operating Temperature | +150 °C |
Series | OptiMOS 3 |
Typical Gate Charge @ Vgs | 15 nC @ 4.5 V |
Transistor Material | Si |
Height | 1mm |