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Infineon IKB40N65ES5ATMA1 IGBT, 79 A 650 V, 3-Pin PG-TO263-3 [IKB40N65ES5ATMA1]; 215-6655
Infineon.THÔNG SỐ KỸ THUẬT: Maximum Continuous Collector Current 79 A Maximum Collector Emitter Voltage 650 V Maximum Gate Emitter Voltage...
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Infineon IKB40N65ES5ATMA1 IGBT, 79 A 650 V, 3-Pin PG-TO263-3 [IKB40N65ES5ATMA1]; 215-6654
Infineon.THÔNG SỐ KỸ THUẬT: Maximum Continuous Collector Current 79 A Maximum Collector Emitter Voltage 650 V Maximum Gate Emitter Voltage...
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STMicroelectronics STGWA40H65DFB2 IGBT, 40 A 650 V, 3-Pin TO-247 [STGWA40H65DFB2]; 202-5517
STMicroelectronics.THÔNG SỐ KỸ THUẬT: Maximum Continuous Collector Current 40 A Maximum Collector Emitter Voltage 650 V Maximum Gate Emitter Voltage...
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STMicroelectronics STGWA40H65DFB2 IGBT, 40 A 650 V, 3-Pin TO-247 [STGWA40H65DFB2]; 202-5516
STMicroelectronics.THÔNG SỐ KỸ THUẬT: Maximum Continuous Collector Current 40 A Maximum Collector Emitter Voltage 650 V Maximum Gate Emitter Voltage...
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Toshiba GT30J341,Q(O IGBT, 59 A 600 V, 3-Pin TO-3PN [GT30J341,Q(O]; 799-4867
Toshiba.THÔNG SỐ KỸ THUẬT: Maximum Continuous Collector Current 59 A Maximum Collector Emitter Voltage 600 V Maximum Gate Emitter Voltage...
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Infineon IKW40N65WR5XKSA1 IGBT, 80 A 650 V, 3-Pin TO-247 [IKW40N65WR5XKSA1]; 133-8573
InfineonTHÔNG SỐ KỸ THUẬT Maximum Continuous Collector Current 80 A Maximum Collector Emitter Voltage 650 V Maximum Gate Emitter Voltage ±20V ...
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Infineon IKW40N65WR5XKSA1 IGBT, 80 A 650 V, 3-Pin TO-247 [IKW40N65WR5XKSA1]; 133-9820
InfineonTHÔNG SỐ KỸ THUẬT Maximum Continuous Collector Current 80 A Maximum Collector Emitter Voltage 650 V Maximum Gate Emitter Voltage ±20V ...
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Infineon IHW40N65R5XKSA1 IGBT, 40 A 650 V, 3-Pin TO-247 [IHW40N65R5XKSA1]; 145-8581
InfineonTHÔNG SỐ KỸ THUẬT Maximum Continuous Collector Current 40 A Maximum Collector Emitter Voltage 650 V Maximum Gate Emitter Voltage ±20V ...
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Infineon IHW40N65R5XKSA1 IGBT, 40 A 650 V, 3-Pin TO-247 [IHW40N65R5XKSA1]; 110-7143
InfineonTHÔNG SỐ KỸ THUẬT Maximum Continuous Collector Current 40 A Maximum Collector Emitter Voltage 650 V Maximum Gate Emitter Voltage ±20V ...
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Toshiba GT50JR22 IGBT, 50 A 600 V, 3-Pin TO-3P [GT50JR22]; 168-7768
Toshiba.THÔNG SỐ KỸ THUẬT: Maximum Continuous Collector Current 50 A Maximum Collector Emitter Voltage 600 V Maximum Gate Emitter Voltage...
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Toshiba GT50JR22 IGBT, 50 A 600 V, 3-Pin TO-3P [GT50JR22]; 796-5064
ToshibaTHÔNG SỐ KỸ THUẬT Maximum Continuous Collector Current 50 A Maximum Collector Emitter Voltage 600 V Maximum Gate Emitter Voltage ±25V ...
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Toshiba GT50JR21 IGBT, 50 A 600 V, 3-Pin TO-3P [GT50JR21]; 168-7767
Toshiba.THÔNG SỐ KỸ THUẬT: Maximum Continuous Collector Current 50 A Maximum Collector Emitter Voltage 600 V Maximum Gate Emitter Voltage...
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Toshiba GT50JR21 IGBT, 50 A 600 V, 3-Pin TO-3P [GT50JR21]; 796-5061
ToshibaTHÔNG SỐ KỸ THUẬT Maximum Continuous Collector Current 50 A Maximum Collector Emitter Voltage 600 V Maximum Gate Emitter Voltage ±25V ...
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Toshiba GT40T321,Q(O IGBT, 40 A 1500 V, 3-Pin TO-3PN [GT40T321,Q(O]; 756-0559
ToshibaTHÔNG SỐ KỸ THUẬT Maximum Continuous Collector Current 40 A Maximum Collector Emitter Voltage 1500 V Maximum Gate Emitter Voltage ±25V ...
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IXYS IXYH20N120C3D1 IGBT, 36 A 1200 V, 3-Pin TO-247 [IXYH20N120C3D1]; 168-4778
IXYSTHÔNG SỐ KỸ THUẬT Maximum Continuous Collector Current 36 A Maximum Collector Emitter Voltage 1200 V Maximum Gate Emitter Voltage ±20V ...
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IXYS IXYH20N120C3D1 IGBT, 36 A 1200 V, 3-Pin TO-247 [IXYH20N120C3D1]; 808-0269
IXYSTHÔNG SỐ KỸ THUẬT Maximum Continuous Collector Current 36 A Maximum Collector Emitter Voltage 1200 V Maximum Gate Emitter Voltage ±20V ...
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