ON Semiconductor HGT1S10N120BNST IGBT, 80 A 1200 V, 3-Pin D2PAK (TO-263) [HGT1S10N120BNST]; 807-6660
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Mã kho: 8076660
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| .THÔNG SỐ KỸ THUẬT: | |
|---|---|
| Maximum Continuous Collector Current | 80 A |
| Maximum Collector Emitter Voltage | 1200 V |
| Maximum Gate Emitter Voltage | ±20V |
| Maximum Power Dissipation | 298 W |
| Package Type | D2PAK (TO-263) |