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ON Semiconductor FGH75T65SQDNL4 P-Channel IGBT, 200 A 650 V, 4-Pin TO-247 [FGH75T65SQDNL4]; 181-1929
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Mã kho: 1811929
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THÔNG SỐ KỸ THUẬT | |
---|---|
Maximum Continuous Collector Current | 200 A |
Maximum Collector Emitter Voltage | 650 V |
Maximum Gate Emitter Voltage | ±20V |
Maximum Power Dissipation | 375 W |
Number of Transistors | 1 |
Package Type | TO-247 |
Mounting Type | Through Hole |
Channel Type | P |
Pin Count | 4 |
Switching Speed | 1MHz |
Transistor Configuration | Single |
Length | 15.8mm |
Width | 5.2mm |
Height | 22.74mm |
Dimensions | 15.8 x 5.2 x 22.74mm |
Gate Capacitance | 5100pF |
Energy Rating | 160µJ |
Maximum Operating Temperature | +175 °C |
Minimum Operating Temperature | -55 °C |