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ON Semiconductor NXH35C120L2C2SG 3 Phase IGBT Module, 35 A 650 V DIP26, Through Hole [NXH35C120L2C2SG]; 202-5681
ON Semiconductor.THÔNG SỐ KỸ THUẬT: Maximum Continuous Collector Current 35 A Maximum Collector Emitter Voltage 650 V Maximum Gate Emitter Voltage...
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ON Semiconductor NXH35C120L2C2ESG 3 Phase IGBT Module, 35 A 650 V DIP26, Through Hole [NXH35C120L2C2ESG]; 202-5680
ON Semiconductor.THÔNG SỐ KỸ THUẬT: Maximum Continuous Collector Current 35 A Maximum Collector Emitter Voltage 650 V Maximum Gate Emitter Voltage...
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