IGBTs

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ON Semiconductor NXH35C120L2C2SG 3 Phase IGBT Module, 35 A 650 V DIP26, Through Hole [NXH35C120L2C2SG]; 202-5681
ON Semiconductor

.THÔNG SỐ KỸ THUẬT: Maximum Continuous Collector Current 35 A Maximum Collector Emitter Voltage 650 V Maximum Gate Emitter Voltage...
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ON Semiconductor NXH35C120L2C2ESG 3 Phase IGBT Module, 35 A 650 V DIP26, Through Hole [NXH35C120L2C2ESG]; 202-5680
ON Semiconductor

.THÔNG SỐ KỸ THUẬT: Maximum Continuous Collector Current 35 A Maximum Collector Emitter Voltage 650 V Maximum Gate Emitter Voltage...
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ON Semiconductor NXH25C120L2C2SG 3 Phase IGBT Module, 25 A 650 V DIP26, Through Hole [NXH25C120L2C2SG]; 202-5678
ON Semiconductor

.THÔNG SỐ KỸ THUẬT: Maximum Continuous Collector Current 25 A Maximum Collector Emitter Voltage 650 V Maximum Gate Emitter Voltage...
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ON Semiconductor NFAL5065L4BT 3 Phase Smart Power Module, 50 A 650 V SPM49-CAB, Through Hole [NFAL5065L4BT]; 202-4067
ON Semiconductor

.THÔNG SỐ KỸ THUẬT: Maximum Continuous Collector Current 50 A Maximum Collector Emitter Voltage 650 V Maximum Gate Emitter Voltage...
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ON Semiconductor NFAM2012L5BT 3 Phase Bridge Smart Power Module, 20 A 1200 V DIP39, Through Hole [NFAM2012L5BT]; 202-4069
ON Semiconductor

.THÔNG SỐ KỸ THUẬT: Maximum Continuous Collector Current 20 A Maximum Collector Emitter Voltage 1200 V Maximum Gate Emitter Voltag...
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ON Semiconductor NFAM2012L5BT 3 Phase Bridge Smart Power Module, 20 A 1200 V DIP39, Through Hole [NFAM2012L5BT]; 202-4068
ON Semiconductor

.THÔNG SỐ KỸ THUẬT: Maximum Continuous Collector Current 20 A Maximum Collector Emitter Voltage 1200 V Maximum Gate Emitter Voltag...
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ON Semiconductor NFAL5065L4B 3 Phase Smart Power Module, 50 A 650 V SPM49-CAA, Through Hole [NFAL5065L4B]; 202-4065
ON Semiconductor

.THÔNG SỐ KỸ THUẬT: Maximum Continuous Collector Current 50 A Maximum Collector Emitter Voltage 650 V Maximum Gate Emitter Voltage...
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ON Semiconductor NFAL5065L4B 3 Phase Smart Power Module, 50 A 650 V SPM49-CAA, Through Hole [NFAL5065L4B]; 202-4063
ON Semiconductor

.THÔNG SỐ KỸ THUẬT: Maximum Continuous Collector Current 50 A Maximum Collector Emitter Voltage 650 V Maximum Gate Emitter Voltage...
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ROHM BM63767S-VC 6 IGBT, ±30 A 600 V, 25-Pin HSDIP [BM63767S-VC]; 185-1033
ROHM

THÔNG SỐ KỸ THUẬT Maximum Continuous Collector Current ±30 A Maximum Collector Emitter Voltage 600 V Number of Transistors 6 Maximum ...
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IGBTs

ON Semiconductor NXH35C120L2C2SG 3 Phase IGBT Module, 35 A 650 V DIP26, Through Hole [NXH35C120L2C2SG]; 202-5681

ON Semiconductor NXH35C120L2C2ESG 3 Phase IGBT Module, 35 A 650 V DIP26, Through Hole [NXH35C120L2C2ESG]; 202-5680

ON Semiconductor NXH25C120L2C2SG 3 Phase IGBT Module, 25 A 650 V DIP26, Through Hole [NXH25C120L2C2SG]; 202-5678

ON Semiconductor NFAL5065L4BT 3 Phase Smart Power Module, 50 A 650 V SPM49-CAB, Through Hole [NFAL5065L4BT]; 202-4067

ON Semiconductor NFAM2012L5BT 3 Phase Bridge Smart Power Module, 20 A 1200 V DIP39, Through Hole [NFAM2012L5BT]; 202-4069

ON Semiconductor NFAM2012L5BT 3 Phase Bridge Smart Power Module, 20 A 1200 V DIP39, Through Hole [NFAM2012L5BT]; 202-4068

ON Semiconductor NFAL5065L4B 3 Phase Smart Power Module, 50 A 650 V SPM49-CAA, Through Hole [NFAL5065L4B]; 202-4065

ON Semiconductor NFAL5065L4B 3 Phase Smart Power Module, 50 A 650 V SPM49-CAA, Through Hole [NFAL5065L4B]; 202-4063

ROHM BM63767S-VC 6 IGBT, ±30 A 600 V, 25-Pin HSDIP [BM63767S-VC]; 185-1033

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