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(Giá chưa VAT).0₫Infineon AIKW50N65RF5XKSA1 IGBT, 80 A 650 V, 3-Pin PG-TO247-3 [AIKW50N65RF5XKSA1]; 228-6508
Infineon.THÔNG SỐ KỸ THUẬT: Maximum Continuous Collector Current 80 A Maximum Collector Emitter Voltage 650 V Maximum Gate Emitter Voltage...
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(Giá chưa VAT).0₫ON Semiconductor NXH50C120L2C2ESG 3 Phase IGBT Module, 35 A 650 V DIP26, Through Hole [NXH50C120L2C2ESG]; 202-5683
ON Semiconductor.THÔNG SỐ KỸ THUẬT: Maximum Continuous Collector Current 35 A Maximum Collector Emitter Voltage 650 V Maximum Gate Emitter Voltage...
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(Giá chưa VAT).0₫ON Semiconductor NXH35C120L2C2SG 3 Phase IGBT Module, 35 A 650 V DIP26, Through Hole [NXH35C120L2C2SG]; 202-5682
ON Semiconductor.THÔNG SỐ KỸ THUẬT: Maximum Continuous Collector Current 35 A Maximum Collector Emitter Voltage 650 V Maximum Gate Emitter Voltage...
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(Giá chưa VAT).0₫ON Semiconductor NXH35C120L2C2SG 3 Phase IGBT Module, 35 A 650 V DIP26, Through Hole [NXH35C120L2C2SG]; 202-5681
ON Semiconductor.THÔNG SỐ KỸ THUẬT: Maximum Continuous Collector Current 35 A Maximum Collector Emitter Voltage 650 V Maximum Gate Emitter Voltage...
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(Giá chưa VAT).0₫ON Semiconductor NXH35C120L2C2ESG 3 Phase IGBT Module, 35 A 650 V DIP26, Through Hole [NXH35C120L2C2ESG]; 202-5680
ON Semiconductor.THÔNG SỐ KỸ THUẬT: Maximum Continuous Collector Current 35 A Maximum Collector Emitter Voltage 650 V Maximum Gate Emitter Voltage...
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(Giá chưa VAT).0₫ON Semiconductor NXH25C120L2C2SG 3 Phase IGBT Module, 25 A 650 V DIP26, Through Hole [NXH25C120L2C2SG]; 202-5678
ON Semiconductor.THÔNG SỐ KỸ THUẬT: Maximum Continuous Collector Current 25 A Maximum Collector Emitter Voltage 650 V Maximum Gate Emitter Voltage...
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