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Discrete Semiconductors
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Diode, 500mA 200V, 3-Pin TO-252GE [RFN5BGE2STL]; 223-6305
ROHM.THÔNG SỐ KỸ THUẬT: Diode Configuration Single Maximum Forward Current 500mA Number of Elements per Chip 1 Mounting Type Surfa...
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Diode, 500mA 200V, 3-Pin TO-252GE [RF501BGE2STL]; 223-6292
ROHM.THÔNG SỐ KỸ THUẬT: Diode Configuration Single Maximum Forward Current 500mA Number of Elements per Chip 1 Mounting Type Surfa...
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Diode, 500mA 600V, 3-Pin TO-252GE [RFN5BGE6STL]; 223-6306
ROHM.THÔNG SỐ KỸ THUẬT: Maximum Forward Current 500mA Diode Configuration Single Number of Elements per Chip 1 Mounting Type Surfa...
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Dual Diode, 2x Common Cathode Pair, 600mA 200V, 3-Pin TO-252GE [RF601BGE2DTL]; 223-6296
ROHM.THÔNG SỐ KỸ THUẬT: Maximum Forward Current 600mA Diode Configuration 2x Common Cathode Pair Mounting Type Surface Mount Numbe...
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Diode, 500mA 600V, 3-Pin TO-252GE [RF505BGE6STL]; 223-6294
ROHM.THÔNG SỐ KỸ THUẬT: Diode Configuration Single Maximum Forward Current 500mA Mounting Type Surface Mount Number of Elements pe...
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Diode, 500mA 200V, 3-Pin TO-252GE [RF501BGE2STL]; 223-6293
ROHM.THÔNG SỐ KỸ THUẬT: Diode Configuration Single Maximum Forward Current 500mA Number of Elements per Chip 1 Mounting Type Surfa...
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P-Channel MOSFET, 4 A, 60 V, 8-Pin DFN2020-8S [RF4L040ATTCR]; 223-6291
ROHM.THÔNG SỐ KỸ THUẬT: Channel Type P Maximum Continuous Drain Current 4 A Maximum Drain Source Voltage 60 V Package Type DFN2020...
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Diode, 300mA 600V, 3-Pin TO-252GE [RF305BGE6STL]; 223-6286
ROHM.THÔNG SỐ KỸ THUẬT: Maximum Forward Current 300mA Diode Configuration Single Number of Elements per Chip 1 Mounting Type Surfa...
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P-Channel MOSFET, 70 A, 40 V, 3-Pin DPAK [RD3G07BATTL1]; 223-6279
ROHM.THÔNG SỐ KỸ THUẬT: Channel Type P Maximum Continuous Drain Current 70 A Maximum Drain Source Voltage 40 V Package Type TO-252...
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Single IGBT, 80 A 1200 V, 3-Pin TO-247N [RGS80TSX2DGC11]; 223-6327
ROHM.THÔNG SỐ KỸ THUẬT: Maximum Continuous Collector Current 80 A Maximum Collector Emitter Voltage 1200 V Maximum Gate Emitter Voltag...
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Single IGBT, 30 A 1200 V, 3-Pin TO-247N [RGS30TSX2HRC11]; 223-6320
ROHM.THÔNG SỐ KỸ THUẬT: Maximum Continuous Collector Current 30 A Maximum Collector Emitter Voltage 1200 V Maximum Gate Emitter Voltag...
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Single IGBT, 80 A 1200 V, 3-Pin TO-247N [RGS80TSX2DGC11]; 223-6326
ROHM.THÔNG SỐ KỸ THUẬT: Maximum Continuous Collector Current 80 A Maximum Collector Emitter Voltage 1200 V Maximum Gate Emitter Voltag...
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Single IGBT, 80 A 1200 V, 3-Pin TO-247N [RGS80TSX2GC11]; 223-6329
ROHM.THÔNG SỐ KỸ THUẬT: Maximum Continuous Collector Current 80 A Maximum Collector Emitter Voltage 1200 V Maximum Gate Emitter Voltag...
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Single IGBT, 80 A 1200 V, 3-Pin TO-247N [RGS80TSX2GC11]; 223-6328
ROHM.THÔNG SỐ KỸ THUẬT: Maximum Continuous Collector Current 80 A Maximum Collector Emitter Voltage 1200 V Maximum Gate Emitter Voltag...
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Single IGBT, 30 A 1200 V, 3-Pin TO-247N [RGS30TSX2DGC11]; 223-6315
ROHM.THÔNG SỐ KỸ THUẬT: Maximum Continuous Collector Current 30 A Maximum Collector Emitter Voltage 1200 V Maximum Gate Emitter Voltag...
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Single IGBT, 30 A 1200 V, 3-Pin TO-247N [RGS30TSX2DGC11]; 223-6314
ROHM.THÔNG SỐ KỸ THUẬT: Maximum Continuous Collector Current 30 A Maximum Collector Emitter Voltage 1200 V Maximum Gate Emitter Voltag...
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Single IGBT, 50 A 1200 V, 3-Pin TO-247N [RGS50TSX2GC11]; 223-6324
ROHM.THÔNG SỐ KỸ THUẬT: Maximum Continuous Collector Current 50 A Maximum Collector Emitter Voltage 1200 V Maximum Gate Emitter Voltag...
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Single IGBT, 30 A 1200 V, 3-Pin TO-247N [RGS30TSX2GC11]; 223-6319
ROHM.THÔNG SỐ KỸ THUẬT: Maximum Continuous Collector Current 30 A Maximum Collector Emitter Voltage 1200 V Maximum Gate Emitter Voltag...
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P-Channel MOSFET, 15 A, 40 V, 3-Pin DPAK [RD3G01BATTL1]; 223-6274
ROHM.THÔNG SỐ KỸ THUẬT: Channel Type P Maximum Continuous Drain Current 15 A Maximum Drain Source Voltage 40 V Package Type TO-252...
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Single IGBT, 30 A 1200 V, 3-Pin TO-247N [RGS30TSX2DHRC11]; 223-6316
ROHM.THÔNG SỐ KỸ THUẬT: Maximum Continuous Collector Current 30 A Maximum Collector Emitter Voltage 1200 V Maximum Gate Emitter Voltag...
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Single IGBT, 30 A 1200 V, 3-Pin TO-247N [RGS30TSX2DHRC11]; 223-6317
ROHM.THÔNG SỐ KỸ THUẬT: Maximum Continuous Collector Current 30 A Maximum Collector Emitter Voltage 1200 V Maximum Gate Emitter Voltag...
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Diode, 800mA 600V, 3-Pin TO-252GE [RFV8BGE6STL]; 223-6313
ROHM.THÔNG SỐ KỸ THUẬT: Diode Configuration Single Maximum Forward Current 800mA Mounting Type Surface Mount Number of Elements pe...
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Diode, 1A 600V, 3-Pin TO-252 [RFV5BGE6STL]; 223-6311
ROHM.THÔNG SỐ KỸ THUẬT: Maximum Forward Current 1A Diode Configuration Single Number of Elements per Chip 1 Mounting Type Surface ...
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Dual Diode, 2x Common Cathode Pair, 1A 600V, 3-Pin TO-252GE [RFN10BGE6STL]; 223-6301
ROHM.THÔNG SỐ KỸ THUẬT: Diode Configuration 2x Common Cathode Pair Maximum Forward Current 1A Mounting Type Surface Mount Number o...
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Diode, 1A 600V, 3-Pin TO-252 [RFV5BGE6STL]; 223-6310
ROHM.THÔNG SỐ KỸ THUẬT: Maximum Forward Current 1A Diode Configuration Single Mounting Type Surface Mount Number of Elements per C...
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Diode, 1A 600V, 3-Pin TO-252 [RFNL10BM6SFHTL]; 223-6309
ROHM.THÔNG SỐ KỸ THUẬT: Diode Configuration Single Maximum Forward Current 1A Mounting Type Surface Mount Number of Elements per C...
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Diode, 800mA 600V, 3-Pin TO-252GE [RFV8BGE6STL]; 223-6312
ROHM.THÔNG SỐ KỸ THUẬT: Diode Configuration Single Maximum Forward Current 800mA Number of Elements per Chip 1 Mounting Type Surfa...
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Diode, 500mA 600V, 3-Pin TO-252GE [RFN5BGE6STL]; 223-6307
ROHM.THÔNG SỐ KỸ THUẬT: Diode Configuration Single Maximum Forward Current 500mA Mounting Type Surface Mount Number of Elements pe...
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Diode, 500mA 200V, 3-Pin TO-252GE [RFN5BGE2STL]; 223-6304
ROHM.THÔNG SỐ KỸ THUẬT: Maximum Forward Current 500mA Diode Configuration Single Number of Elements per Chip 1 Mounting Type Surfa...
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Diode, 300mA 200V, 3-Pin TO-252GE [RFN3BGE2STL]; 223-6302
ROHM.THÔNG SỐ KỸ THUẬT: Diode Configuration Single Maximum Forward Current 300mA Mounting Type Surface Mount Number of Elements pe...
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Diode, 300mA 200V, 3-Pin TO-252GE [RFN3BGE2STL]; 223-6303
ROHM.THÔNG SỐ KỸ THUẬT: Diode Configuration Single Maximum Forward Current 300mA Mounting Type Surface Mount Number of Elements pe...
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Dual Diode, 2x Common Cathode Pair, 1A 350V, 3-Pin TO-252GE [RFN10BGE3STL]; 223-6299
ROHM.THÔNG SỐ KỸ THUẬT: Diode Configuration 2x Common Cathode Pair Maximum Forward Current 1A Number of Elements per Chip 2 Mounti...
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Dual Diode, 2x Common Cathode Pair, 1A 600V, 3-Pin TO-252GE [RFN10BGE6STL]; 223-6300
ROHM.THÔNG SỐ KỸ THUẬT: Diode Configuration 2x Common Cathode Pair Maximum Forward Current 1A Number of Elements per Chip 2 Mounti...
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P-Channel MOSFET, 4 A, 60 V, 8-Pin DFN2020-8S [RF4L040ATTCR]; 223-6290
ROHM.THÔNG SỐ KỸ THUẬT: Channel Type P Maximum Continuous Drain Current 4 A Maximum Drain Source Voltage 60 V Package Type DFN2020...
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Diode, 500mA 600V, 3-Pin TO-252GE [RF505BGE6STL]; 223-6295
ROHM.THÔNG SỐ KỸ THUẬT: Maximum Forward Current 500mA Diode Configuration Single Mounting Type Surface Mount Number of Elements pe...
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Dual Diode, 2x Common Cathode Pair, 1A 350V, 3-Pin TO-252GE [RFN10BGE3STL]; 223-6298
ROHM.THÔNG SỐ KỸ THUẬT: Maximum Forward Current 1A Diode Configuration 2x Common Cathode Pair Mounting Type Surface Mount Number o...
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Dual Diode, 2x Common Cathode Pair, 600mA 200V, 3-Pin TO-252GE [RF601BGE2DTL]; 223-6297
ROHM.THÔNG SỐ KỸ THUẬT: Diode Configuration 2x Common Cathode Pair Maximum Forward Current 600mA Number of Elements per Chip 2 Mou...
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P-Channel MOSFET, 6 A, 40 V, 8-Pin DFN2020-8S [RF4G060ATTCR]; 223-6289
ROHM.THÔNG SỐ KỸ THUẬT: Channel Type P Maximum Continuous Drain Current 6 A Maximum Drain Source Voltage 40 V Package Type DFN2020...
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Diode, 300mA 600V, 3-Pin TO-252GE [RF305BGE6STL]; 223-6287
ROHM.THÔNG SỐ KỸ THUẬT: Maximum Forward Current 300mA Diode Configuration Single Number of Elements per Chip 1 Mounting Type Surfa...
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P-Channel MOSFET, 6 A, 40 V, 8-Pin DFN2020-8S [RF4G060ATTCR]; 223-6288
ROHM.THÔNG SỐ KỸ THUẬT: Channel Type P Maximum Continuous Drain Current 6 A Maximum Drain Source Voltage 40 V Package Type DFN2020...
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P-Channel MOSFET, 70 A, 60 V, 3-Pin DPAK [RD3L07BATTL1]; 223-6284
ROHM.THÔNG SỐ KỸ THUẬT: Channel Type P Maximum Continuous Drain Current 70 A Maximum Drain Source Voltage 60 V Package Type TO-252...
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P-Channel MOSFET, 10 A, 60 V, 3-Pin DPAK [RD3L01BATTL1]; 223-6280
ROHM.THÔNG SỐ KỸ THUẬT: Channel Type P Maximum Continuous Drain Current 10 A Maximum Drain Source Voltage 60 V Package Type TO-252...
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P-Channel MOSFET, 35 A, 60 V, 3-Pin DPAK [RD3L03BATTL1]; 223-6283
ROHM.THÔNG SỐ KỸ THUẬT: Channel Type P Maximum Continuous Drain Current 35 A Maximum Drain Source Voltage 60 V Package Type TO-252...
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P-Channel MOSFET, 70 A, 40 V, 3-Pin DPAK [RD3G07BATTL1]; 223-6278
ROHM.THÔNG SỐ KỸ THUẬT: Channel Type P Maximum Continuous Drain Current 70 A Maximum Drain Source Voltage 40 V Package Type TO-252...
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P-Channel MOSFET, 35 A, 60 V, 3-Pin DPAK [RD3L03BATTL1]; 223-6282
ROHM.THÔNG SỐ KỸ THUẬT: Channel Type P Maximum Continuous Drain Current 35 A Maximum Drain Source Voltage 60 V Package Type TO-252...
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P-Channel MOSFET, 70 A, 60 V, 3-Pin DPAK [RD3L07BATTL1]; 223-6285
ROHM.THÔNG SỐ KỸ THUẬT: Channel Type P Maximum Continuous Drain Current 70 A Maximum Drain Source Voltage 60 V Package Type TO-252...
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P-Channel MOSFET, 10 A, 60 V, 3-Pin DPAK [RD3L01BATTL1]; 223-6281
ROHM.THÔNG SỐ KỸ THUẬT: Channel Type P Maximum Continuous Drain Current 10 A Maximum Drain Source Voltage 60 V Package Type TO-252...
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P-Channel MOSFET, 35 A, 40 V, 3-Pin DPAK [RD3G03BATTL1]; 223-6277
ROHM.THÔNG SỐ KỸ THUẬT: Channel Type P Maximum Continuous Drain Current 35 A Maximum Drain Source Voltage 40 V Package Type TO-252...
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