Discrete Semiconductors
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(Giá chưa VAT).0₫ON Semiconductor, NDS351N [NDS351N]; 186-7191
ON SemiconductorTHÔNG SỐ KỸ THUẬT Number of Elements per Chip 1 Mounting Type Surface Mount Package Type SOT-23 Pin Count 3 Transistor Configuratio...
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(Giá chưa VAT).0₫ON Semiconductor, FQT1N60CTF-WS [FQT1N60CTF-WS]; 186-8824
ON Semiconductor.THÔNG SỐ KỸ THUẬT: Package Type SOT-223 Mounting Type Surface Mount Maximum Power Dissipation 2.1 W Transistor Configuration ...
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(Giá chưa VAT).0₫IXYS MDI75-12A3, Y4 M5 IGBT Module, 90 A max, 1200 V, Panel Mount [MDI75-12A3]; 194-423
IXYSTHÔNG SỐ KỸ THUẬT Transistor Configuration Single Configuration Single Maximum Continuous Collector Current 90 A Maximum Collector Em...
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(Giá chưa VAT).0₫IXYS MDI75-12A3, Y4 M5 IGBT Module, 90 A max, 1200 V, Panel Mount [MDI75-12A3]; 168-4497
IXYSTHÔNG SỐ KỸ THUẬT Transistor Configuration Single Configuration Single Maximum Continuous Collector Current 90 A Maximum Collector Em...
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(Giá chưa VAT).0₫ON Semiconductor 2SK3666-3-TB-E N-Channel JFET, 30 V, Idss 1.2 → 3mA, 3-Pin CP [2SK3666-3-TB-E]; 145-4162
ON SemiconductorTHÔNG SỐ KỸ THUẬT Channel Type N Idss Drain-Source Cut-off Current 1.2 → 3mA Maximum Drain Source Voltage 30 V Maximum Drain Gate Vol...
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(Giá chưa VAT).0₫ON Semiconductor, MMBF0201NLT1G [MMBF0201NLT1G]; 186-7169
ON Semiconductor.THÔNG SỐ KỸ THUẬT: Package Type SOT-23 Mounting Type Surface Mount Maximum Power Dissipation 225 mW Transistor Configuration ...
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(Giá chưa VAT).0₫Fuji Electric 1MBi200U4H-120L-50, M259 IGBT Module, 200 A max, 1200 V, Panel Mount [1MBI200U4H-120L-50]; 168-4641
Fuji ElectricTHÔNG SỐ KỸ THUẬT Configuration Single Transistor Configuration Single Maximum Continuous Collector Current 200 A Maximum Collector E...
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(Giá chưa VAT).0₫ON Semiconductor JFET [MMBFJ112]; 145-5553
ON SemiconductorTHÔNG SỐ KỸ THUẬT Channel Type N Idss Drain-Source Cut-off Current Min. 5mA Maximum Gate Source Voltage -35 V Maximum Drain Gate Volt...
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(Giá chưa VAT).0₫Infineon FZ400R12KE3B1HOSA1, 62MM Module IGBT Module, 650 A max, 1200 V, Panel Mount [FZ400R12KE3B1HOSA1]; 838-6908
InfineonTHÔNG SỐ KỸ THUẬT Configuration Single Transistor Configuration Single Maximum Continuous Collector Current 650 A Maximum Collector E...
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(Giá chưa VAT).0₫IXYS IXYN30N170CV1, SOT-227B Dual Emitter IGBT Module, 80 A max, 1700 V, Surface Mount [IXYN30N170CV1]; 146-4402
IXYSTHÔNG SỐ KỸ THUẬT Transistor Configuration Single Configuration Dual Emitter Maximum Continuous Collector Current 80 A Maximum Collec...
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(Giá chưa VAT).0₫Infineon FZ400R12KE3HOSA1, 62MM Module IGBT Module, 650 A max, 1200 V, Panel Mount [FZ400R12KE3HOSA1]; 838-6898
Infineon.THÔNG SỐ KỸ THUẬT: Maximum Continuous Collector Current 650 A Maximum Collector Emitter Voltage 1200 V Maximum Gate Emitter Volta...
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(Giá chưa VAT).0₫ON Semiconductor J111 N-Channel JFET, Idss min. 20mA, 3-Pin TO-92 [J111]; 806-1753
ON SemiconductorTHÔNG SỐ KỸ THUẬT Channel Type N Idss Drain-Source Cut-off Current Min. 20mA Maximum Gate Source Voltage -35 V Maximum Drain Gate Vol...
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(Giá chưa VAT).0₫IXYS MDI200-12A4, Y3 DCB IGBT Module, 270 A max, 1200 V, Panel Mount [MDI200-12A4]; 194-653
IXYSTHÔNG SỐ KỸ THUẬT Transistor Configuration Single Configuration Single Maximum Continuous Collector Current 270 A Maximum Collector E...
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(Giá chưa VAT).0₫Semikron SKM400GAL12E4, SEMITRANS3 IGBT Module, 618 A max, 1200 V, Panel Mount [SKM400GAL12E4]; 687-4989
SemikronTHÔNG SỐ KỸ THUẬT Configuration Single Transistor Configuration Single Maximum Continuous Collector Current 618 A Maximum Collector E...
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(Giá chưa VAT).0₫IXYS MID75-12A3, Y4 M5 IGBT Module, 90 A max, 1200 V, Panel Mount [MID75-12A3]; 193-521
IXYSTHÔNG SỐ KỸ THUẬT Configuration Single Transistor Configuration Single Maximum Continuous Collector Current 90 A Maximum Collector Em...
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(Giá chưa VAT).0₫ON Semiconductor 2SK932-23-TB-E N-Channel JFET, 15 V, Idss 10 → 17mA, 3-Pin CP [2SK932-23-TB-E]; 163-2024
ON SemiconductorTHÔNG SỐ KỸ THUẬT Channel Type N Idss Drain-Source Cut-off Current 10 → 17mA Maximum Drain Source Voltage 15 V Maximum Drain Gate Vol...
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(Giá chưa VAT).0₫Panasonic DSK5J01P0L N-Channel JFET, Idss 1 → 3mA, 3-Pin SMini3 F2 B [DSK5J01P0L]; 749-8265
Panasonic.THÔNG SỐ KỸ THUẬT:
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(Giá chưa VAT).0₫IXYS MDI200-12A4, Y3 DCB IGBT Module, 270 A max, 1200 V, Panel Mount [MDI200-12A4]; 168-4501
IXYSTHÔNG SỐ KỸ THUẬT Configuration Single Transistor Configuration Single Maximum Continuous Collector Current 270 A Maximum Collector E...
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(Giá chưa VAT).0₫NXP BF513,215 N-Channel JFET, 20 V, Idss 10 → 18mA, 3-Pin SOT-23 [BF513,215]; 166-0536
NXPTHÔNG SỐ KỸ THUẬT Channel Type N Idss Drain-Source Cut-off Current 10 → 18mA Maximum Drain Source Voltage 20 V Maximum Drain Gate Vol...
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(Giá chưa VAT).0₫ON Semiconductor MMBFJ309LT1G N-Channel JFET, 25 V, Idss 12 → 30mA, 3-Pin SOT-23 [MMBFJ309LT1G]; 773-7819
ON Semiconductor.THÔNG SỐ KỸ THUẬT: Channel Type N Idss Drain-Source Cut-off Current 12 to 30mA Maximum Drain Source Voltage 25 V Configuratio...
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(Giá chưa VAT).0₫IXYS MID75-12A3, Y4 M5 IGBT Module, 90 A max, 1200 V, Panel Mount [MID75-12A3]; 168-4471
IXYSTHÔNG SỐ KỸ THUẬT Configuration Single Transistor Configuration Single Maximum Continuous Collector Current 90 A Maximum Collector Em...
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(Giá chưa VAT).0₫ON Semiconductor MMBFJ309LT1G N-Channel JFET, 25 V, Idss 12 → 30mA, 3-Pin SOT-23 [MMBFJ309LT1G]; 163-0964
ON SemiconductorTHÔNG SỐ KỸ THUẬT Channel Type N Idss Drain-Source Cut-off Current 12 → 30mA Maximum Drain Source Voltage 25 V Configuration Single ...
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(Giá chưa VAT).0₫ON Semiconductor 2SK932-22-TB-E N-Channel JFET, 15 V, Idss 7.3 → 12mA, 3-Pin CP [2SK932-22-TB-E]; 163-2023
ON SemiconductorTHÔNG SỐ KỸ THUẬT Channel Type N Idss Drain-Source Cut-off Current 7.3 → 12mA Maximum Drain Source Voltage 15 V Maximum Drain Gate Vo...
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(Giá chưa VAT).0₫ON Semiconductor MMBFJ201 N-Channel JFET, Idss 0.3 → 1.5mA, 3-Pin SOT-23 [MMBFJ201]; 166-1840
ON SemiconductorTHÔNG SỐ KỸ THUẬT Channel Type N Idss Drain-Source Cut-off Current 0.3 → 1.5mA Maximum Gate Source Voltage -40 V Maximum Drain Gate V...
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(Giá chưa VAT).0₫NXP BF513,215 N-Channel JFET, 20 V, Idss 10 → 18mA, 3-Pin SOT-23 [BF513,215]; 626-2311
NXP.THÔNG SỐ KỸ THUẬT: Channel Type N Idss Drain-Source Cut-off Current 10 to 18mA Maximum Drain Source Voltage 20 V Maximum Drai...
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(Giá chưa VAT).0₫Panasonic DSK5J01P0L N-Channel JFET, Idss 1 → 3mA, 3-Pin SMini3 F2 B [DSK5J01P0L]; 169-7867
PanasonicTHÔNG SỐ KỸ THUẬT Channel Type N Idss Drain-Source Cut-off Current 1 → 3mA Maximum Drain Gate Voltage -55V Transistor Configuration S...
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(Giá chưa VAT).0₫Semikron SKM150GAL12T4, SEMITRANS2 IGBT Module, 232 A max, 1200 V, Panel Mount [SKM150GAL12T4]; 687-4951
SemikronTHÔNG SỐ KỸ THUẬT Transistor Configuration Single Configuration Single Maximum Continuous Collector Current 232 A Maximum Collector E...
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(Giá chưa VAT).0₫Infineon FZ600R12KS4HOSA1, AG-62MM-2 IGBT Module, 700 A max, 1200 V, Panel Mount [FZ600R12KS4HOSA1]; 111-6096
InfineonTHÔNG SỐ KỸ THUẬT Configuration Single Transistor Configuration Single Maximum Continuous Collector Current 700 A Maximum Collector E...
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(Giá chưa VAT).0₫Infineon FZ600R12KS4HOSA1, AG-62MM-2 IGBT Module, 700 A max, 1200 V, Panel Mount [FZ600R12KS4HOSA1]; 166-1097
InfineonTHÔNG SỐ KỸ THUẬT Transistor Configuration Single Configuration Single Maximum Continuous Collector Current 700 A Maximum Collector E...
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(Giá chưa VAT).0₫ON Semiconductor TF414T5G N-Channel JFET, 40 V, Idss 0.05 → 0.13mA, 3-Pin SOT-883 [TF414T5G]; 163-0320
ON SemiconductorTHÔNG SỐ KỸ THUẬT Channel Type N Idss Drain-Source Cut-off Current 0.05 → 0.13mA Maximum Drain Source Voltage 40 V Maximum Drain Gate...
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(Giá chưa VAT).0₫Panasonic DSK5J01R0L N-Channel JFET, Idss 5 → 12mA, 3-Pin SMini3 F2 B [DSK5J01R0L]; 169-7868
PanasonicTHÔNG SỐ KỸ THUẬT Channel Type N Idss Drain-Source Cut-off Current 5 → 12mA Maximum Drain Gate Voltage -55V Configuration Single Tr...
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(Giá chưa VAT).0₫Panasonic DSK5J01R0L N-Channel JFET, Idss 5 → 12mA, 3-Pin SMini3 F2 B [DSK5J01R0L]; 749-8268
PanasonicTHÔNG SỐ KỸ THUẬT Channel Type N Idss Drain-Source Cut-off Current 5 → 12mA Maximum Drain Gate Voltage -55V Configuration Single Tr...
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(Giá chưa VAT).0₫ON Semiconductor TF414T5G N-Channel JFET, 40 V, Idss 0.05 → 0.13mA, 3-Pin SOT-883 [TF414T5G]; 920-9928
ON SemiconductorTHÔNG SỐ KỸ THUẬT Channel Type N Idss Drain-Source Cut-off Current 0.05 → 0.13mA Maximum Drain Source Voltage 40 V Maximum Drain Gate...
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(Giá chưa VAT).0₫ON Semiconductor J112 N-Channel JFET, Idss min. 5mA, 3-Pin TO-92 [J112]; 124-1385
ON SemiconductorTHÔNG SỐ KỸ THUẬT Channel Type N Idss Drain-Source Cut-off Current Min. 5mA Maximum Gate Source Voltage -35 V Maximum Drain Gate Volt...
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(Giá chưa VAT).0₫ON Semiconductor J109 N-Channel JFET, Idss min. 40mA, 3-Pin TO-92 [J109]; 806-1750
ON SemiconductorTHÔNG SỐ KỸ THUẬT Channel Type N Idss Drain-Source Cut-off Current Min. 40mA Maximum Gate Source Voltage -25 V Maximum Drain Gate Vol...
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(Giá chưa VAT).0₫ON Semiconductor MMBFJ177LT1G P-Channel JFET, Idss 1.5 → 20mA, 3-Pin SOT-23 [MMBFJ177LT1G]; 163-0963
ON SemiconductorTHÔNG SỐ KỸ THUẬT Channel Type P Idss Drain-Source Cut-off Current 1.5 → 20mA Maximum Drain Gate Voltage 25V dc Transistor Configurat...
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(Giá chưa VAT).0₫Infineon BSM200GA120DN2HOSA1, 62MM Module IGBT Module, 300 A max, 1200 V, Panel Mount [BSM200GA120DN2HOSA1]; 170-2163
InfineonTHÔNG SỐ KỸ THUẬT Configuration Single Transistor Configuration Single Maximum Continuous Collector Current 300 A Maximum Collector E...
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(Giá chưa VAT).0₫Infineon BSM200GA120DN2HOSA1, 62MM Module IGBT Module, 300 A max, 1200 V, Panel Mount [BSM200GA120DN2HOSA1]; 752-8170
InfineonTHÔNG SỐ KỸ THUẬT Transistor Configuration Single Configuration Single Maximum Continuous Collector Current 300 A Maximum Collector E...
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(Giá chưa VAT).0₫ON Semiconductor MMBFJ177LT1G P-Channel JFET, Idss 1.5 → 20mA, 3-Pin SOT-23 [MMBFJ177LT1G]; 773-7816
ON SemiconductorTHÔNG SỐ KỸ THUẬT Channel Type P Idss Drain-Source Cut-off Current 1.5 → 20mA Maximum Drain Gate Voltage 25V dc Transistor Configurat...
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(Giá chưa VAT).0₫ON Semiconductor MMBFJ113 N-Channel JFET, Idss min. 2mA, 3-Pin SOT-23 [MMBFJ113]; 166-1831
ON SemiconductorTHÔNG SỐ KỸ THUẬT Primary Voltage Rating 2 x 115V ac Secondary Voltage Rating 2 x 24V ac Power Rating 300VA Dimensions 117 (Dia.) x 6...
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(Giá chưa VAT).0₫ON Semiconductor MMBFJ310LT3G N-Channel JFET, 25 V, Idss 24 → 60mA, 3-Pin SOT-23 [MMBFJ310LT3G]; 122-0136
ON SemiconductorTHÔNG SỐ KỸ THUẬT Channel Type N Idss Drain-Source Cut-off Current 24 → 60mA Maximum Drain Source Voltage 25 V Configuration Single ...
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(Giá chưa VAT).0₫ON Semiconductor MMBFJ310LT3G N-Channel JFET, 25 V, Idss 24 → 60mA, 3-Pin SOT-23 [MMBFJ310LT3G]; 773-7813
ON SemiconductorTHÔNG SỐ KỸ THUẬT Channel Type N Idss Drain-Source Cut-off Current 24 → 60mA Maximum Drain Source Voltage 25 V Configuration Single ...
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(Giá chưa VAT).0₫ON Semiconductor MMBFJ310LT1G N-Channel JFET, 25 V, Idss 24 → 60mA, 3-Pin SOT-23 [MMBFJ310LT1G]; 170-3357
ON SemiconductorTHÔNG SỐ KỸ THUẬT Channel Type N Idss Drain-Source Cut-off Current 24 → 60mA Maximum Drain Source Voltage 25 V Maximum Gate Source Vo...
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(Giá chưa VAT).0₫ON Semiconductor TF412ST5G N-Channel JFET, 30 V, Idss 1.2 → 3mA, 3-Pin SOT-883 [TF412ST5G]; 867-3287
ON Semiconductor.THÔNG SỐ KỸ THUẬT: Channel Type N Idss Drain-Source Cut-off Current 1.2 to 3mA Maximum Drain Source Voltage 30 V Maximum Drai...
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(Giá chưa VAT).0₫ON Semiconductor TF412ST5G N-Channel JFET, 30 V, Idss 1.2 → 3mA, 3-Pin SOT-883 [TF412ST5G]; 163-0319
ON Semiconductor.THÔNG SỐ KỸ THUẬT: Channel Type N Idss Drain-Source Cut-off Current 1.2 to 3mA Maximum Drain Source Voltage 30 V Maximum Drai...
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