Discrete Semiconductors
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(Giá chưa VAT).0₫FFSP0665A SiC SiC Power Module, 2+Tab-Pin TO-220 ON Semiconductor [FFSP0665A]; 172-8792
ON SemiconductorTHÔNG SỐ KỸ THUẬT Package Type TO-220 Mounting Type Through Hole Pin Count 2 + Tab Maximum Power Dissipation 65 W Transistor Config...
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(Giá chưa VAT).0₫Infineon FZ300R12KE3GHOSA1, 62MM Module IGBT Module, 480 A max, 1200 V, Panel Mount [FZ300R12KE3GHOSA1]; 124-8784
InfineonTHÔNG SỐ KỸ THUẬT Configuration Single Transistor Configuration Single Maximum Continuous Collector Current 480 A Maximum Collector E...
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(Giá chưa VAT).0₫IXYS MDI145-12A3, Y4 M5 IGBT Module, 160 A max, 1200 V, Panel Mount [MDI145-12A3]; 168-4498
IXYS.THÔNG SỐ KỸ THUẬT: Maximum Continuous Collector Current 160 A Maximum Collector Emitter Voltage 1200 V Maximum Gate Emitter Volta...
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(Giá chưa VAT).0₫IXYS MID200-12A4, Y3 DCB IGBT Module, 270 A max, 1200 V, Panel Mount [MID200-12A4]; 194-394
IXYSTHÔNG SỐ KỸ THUẬT Configuration Single Transistor Configuration Single Maximum Continuous Collector Current 270 A Maximum Collector E...
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(Giá chưa VAT).0₫IXYS MID145-12A3, Y4 M5 IGBT Module, 160 A max, 1200 V, Panel Mount [MID145-12A3]; 168-4496
IXYS.THÔNG SỐ KỸ THUẬT: Maximum Continuous Collector Current 160 A Maximum Collector Emitter Voltage 1200 V Maximum Gate Emitter Volta...
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(Giá chưa VAT).0₫FFSP2065A SiC MOSFET, 2+Tab-Pin TO-220 ON Semiconductor [FFSP2065A]; 172-3392
ON SemiconductorTHÔNG SỐ KỸ THUẬT Package Type TO-220 Mounting Type Through Hole Pin Count 2 + Tab Maximum Power Dissipation 187 W Transistor Confi...
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(Giá chưa VAT).0₫Infineon FZ400R12KE3HOSA1, 62MM Module IGBT Module, 650 A max, 1200 V, Panel Mount [FZ400R12KE3HOSA1]; 124-8790
InfineonTHÔNG SỐ KỸ THUẬT Transistor Configuration Single Configuration Single Maximum Continuous Collector Current 650 A Maximum Collector E...
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(Giá chưa VAT).0₫FFSP0865A SiC SiC Power Module, 2+Tab-Pin TO-220 ON Semiconductor [FFSP0865A]; 172-8787
ON SemiconductorTHÔNG SỐ KỸ THUẬT Package Type TO-220 Mounting Type Through Hole Pin Count 2 + Tab Maximum Power Dissipation 98 W Transistor Config...
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(Giá chưa VAT).0₫ON Semiconductor, FDMA420NZ [FDMA420NZ]; 186-7382
ON Semiconductor.THÔNG SỐ KỸ THUẬT: Package Type MicroFET 2 x 2 Mounting Type Surface Mount Maximum Power Dissipation 2.4 W Transistor Configu...
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(Giá chưa VAT).0₫ON Semiconductor 2SK932-24-TB-E N-Channel JFET, 15 V, Idss 14.5 → 24mA, 3-Pin CP [2SK932-24-TB-E]; 792-5177
ON SemiconductorTHÔNG SỐ KỸ THUẬT Channel Type N Idss Drain-Source Cut-off Current 14.5 → 24mA Maximum Drain Source Voltage 15 V Maximum Drain Gate V...
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(Giá chưa VAT).0₫STMicroelectronics, STN790A [STN790A]; 188-8506
STMicroelectronicsTHÔNG SỐ KỸ THUẬT Package Type SOT-223 Mounting Type Surface Mount Pin Count 4 Maximum Power Dissipation 1.6 W Transistor Configura...
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(Giá chưa VAT).0₫450V NPN High Voltage Power Transistor [APT27HZTR-G1]; 921-0849
DiodesZetexTHÔNG SỐ KỸ THUẬT Transistor Type NPN Package Type TO-92 Mounting Type Through Hole Maximum Power Dissipation 800 mW Transistor Con...
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(Giá chưa VAT).0₫ON Semiconductor, NDS351N [NDS351N]; 186-7191
ON SemiconductorTHÔNG SỐ KỸ THUẬT Number of Elements per Chip 1 Mounting Type Surface Mount Package Type SOT-23 Pin Count 3 Transistor Configuratio...
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(Giá chưa VAT).0₫ON Semiconductor, FQT1N60CTF-WS [FQT1N60CTF-WS]; 186-8824
ON Semiconductor.THÔNG SỐ KỸ THUẬT: Package Type SOT-223 Mounting Type Surface Mount Maximum Power Dissipation 2.1 W Transistor Configuration ...
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(Giá chưa VAT).0₫IXYS MDI75-12A3, Y4 M5 IGBT Module, 90 A max, 1200 V, Panel Mount [MDI75-12A3]; 194-423
IXYSTHÔNG SỐ KỸ THUẬT Transistor Configuration Single Configuration Single Maximum Continuous Collector Current 90 A Maximum Collector Em...
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(Giá chưa VAT).0₫IXYS MDI75-12A3, Y4 M5 IGBT Module, 90 A max, 1200 V, Panel Mount [MDI75-12A3]; 168-4497
IXYSTHÔNG SỐ KỸ THUẬT Transistor Configuration Single Configuration Single Maximum Continuous Collector Current 90 A Maximum Collector Em...
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(Giá chưa VAT).0₫ON Semiconductor 2SK3666-3-TB-E N-Channel JFET, 30 V, Idss 1.2 → 3mA, 3-Pin CP [2SK3666-3-TB-E]; 145-4162
ON SemiconductorTHÔNG SỐ KỸ THUẬT Channel Type N Idss Drain-Source Cut-off Current 1.2 → 3mA Maximum Drain Source Voltage 30 V Maximum Drain Gate Vol...
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(Giá chưa VAT).0₫ON Semiconductor, MMBF0201NLT1G [MMBF0201NLT1G]; 186-7169
ON Semiconductor.THÔNG SỐ KỸ THUẬT: Package Type SOT-23 Mounting Type Surface Mount Maximum Power Dissipation 225 mW Transistor Configuration ...
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(Giá chưa VAT).0₫Fuji Electric 1MBi200U4H-120L-50, M259 IGBT Module, 200 A max, 1200 V, Panel Mount [1MBI200U4H-120L-50]; 168-4641
Fuji ElectricTHÔNG SỐ KỸ THUẬT Configuration Single Transistor Configuration Single Maximum Continuous Collector Current 200 A Maximum Collector E...
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(Giá chưa VAT).0₫ON Semiconductor JFET [MMBFJ112]; 145-5553
ON SemiconductorTHÔNG SỐ KỸ THUẬT Channel Type N Idss Drain-Source Cut-off Current Min. 5mA Maximum Gate Source Voltage -35 V Maximum Drain Gate Volt...
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(Giá chưa VAT).0₫Infineon FZ400R12KE3B1HOSA1, 62MM Module IGBT Module, 650 A max, 1200 V, Panel Mount [FZ400R12KE3B1HOSA1]; 838-6908
InfineonTHÔNG SỐ KỸ THUẬT Configuration Single Transistor Configuration Single Maximum Continuous Collector Current 650 A Maximum Collector E...
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(Giá chưa VAT).0₫IXYS IXYN30N170CV1, SOT-227B Dual Emitter IGBT Module, 80 A max, 1700 V, Surface Mount [IXYN30N170CV1]; 146-4402
IXYSTHÔNG SỐ KỸ THUẬT Transistor Configuration Single Configuration Dual Emitter Maximum Continuous Collector Current 80 A Maximum Collec...
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(Giá chưa VAT).0₫Infineon FZ400R12KE3HOSA1, 62MM Module IGBT Module, 650 A max, 1200 V, Panel Mount [FZ400R12KE3HOSA1]; 838-6898
Infineon.THÔNG SỐ KỸ THUẬT: Maximum Continuous Collector Current 650 A Maximum Collector Emitter Voltage 1200 V Maximum Gate Emitter Volta...
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(Giá chưa VAT).0₫ON Semiconductor J111 N-Channel JFET, Idss min. 20mA, 3-Pin TO-92 [J111]; 806-1753
ON SemiconductorTHÔNG SỐ KỸ THUẬT Channel Type N Idss Drain-Source Cut-off Current Min. 20mA Maximum Gate Source Voltage -35 V Maximum Drain Gate Vol...
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(Giá chưa VAT).0₫IXYS MDI200-12A4, Y3 DCB IGBT Module, 270 A max, 1200 V, Panel Mount [MDI200-12A4]; 194-653
IXYSTHÔNG SỐ KỸ THUẬT Transistor Configuration Single Configuration Single Maximum Continuous Collector Current 270 A Maximum Collector E...
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(Giá chưa VAT).0₫Semikron SKM400GAL12E4, SEMITRANS3 IGBT Module, 618 A max, 1200 V, Panel Mount [SKM400GAL12E4]; 687-4989
SemikronTHÔNG SỐ KỸ THUẬT Configuration Single Transistor Configuration Single Maximum Continuous Collector Current 618 A Maximum Collector E...
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(Giá chưa VAT).0₫IXYS MID75-12A3, Y4 M5 IGBT Module, 90 A max, 1200 V, Panel Mount [MID75-12A3]; 193-521
IXYSTHÔNG SỐ KỸ THUẬT Configuration Single Transistor Configuration Single Maximum Continuous Collector Current 90 A Maximum Collector Em...
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(Giá chưa VAT).0₫ON Semiconductor 2SK932-23-TB-E N-Channel JFET, 15 V, Idss 10 → 17mA, 3-Pin CP [2SK932-23-TB-E]; 163-2024
ON SemiconductorTHÔNG SỐ KỸ THUẬT Channel Type N Idss Drain-Source Cut-off Current 10 → 17mA Maximum Drain Source Voltage 15 V Maximum Drain Gate Vol...
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(Giá chưa VAT).0₫Panasonic DSK5J01P0L N-Channel JFET, Idss 1 → 3mA, 3-Pin SMini3 F2 B [DSK5J01P0L]; 749-8265
Panasonic.THÔNG SỐ KỸ THUẬT:
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(Giá chưa VAT).0₫IXYS MDI200-12A4, Y3 DCB IGBT Module, 270 A max, 1200 V, Panel Mount [MDI200-12A4]; 168-4501
IXYSTHÔNG SỐ KỸ THUẬT Configuration Single Transistor Configuration Single Maximum Continuous Collector Current 270 A Maximum Collector E...
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(Giá chưa VAT).0₫NXP BF513,215 N-Channel JFET, 20 V, Idss 10 → 18mA, 3-Pin SOT-23 [BF513,215]; 166-0536
NXPTHÔNG SỐ KỸ THUẬT Channel Type N Idss Drain-Source Cut-off Current 10 → 18mA Maximum Drain Source Voltage 20 V Maximum Drain Gate Vol...
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(Giá chưa VAT).0₫ON Semiconductor MMBFJ309LT1G N-Channel JFET, 25 V, Idss 12 → 30mA, 3-Pin SOT-23 [MMBFJ309LT1G]; 773-7819
ON Semiconductor.THÔNG SỐ KỸ THUẬT: Channel Type N Idss Drain-Source Cut-off Current 12 to 30mA Maximum Drain Source Voltage 25 V Configuratio...
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(Giá chưa VAT).0₫IXYS MID75-12A3, Y4 M5 IGBT Module, 90 A max, 1200 V, Panel Mount [MID75-12A3]; 168-4471
IXYSTHÔNG SỐ KỸ THUẬT Configuration Single Transistor Configuration Single Maximum Continuous Collector Current 90 A Maximum Collector Em...
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(Giá chưa VAT).0₫ON Semiconductor MMBFJ309LT1G N-Channel JFET, 25 V, Idss 12 → 30mA, 3-Pin SOT-23 [MMBFJ309LT1G]; 163-0964
ON SemiconductorTHÔNG SỐ KỸ THUẬT Channel Type N Idss Drain-Source Cut-off Current 12 → 30mA Maximum Drain Source Voltage 25 V Configuration Single ...
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(Giá chưa VAT).0₫ON Semiconductor 2SK932-22-TB-E N-Channel JFET, 15 V, Idss 7.3 → 12mA, 3-Pin CP [2SK932-22-TB-E]; 163-2023
ON SemiconductorTHÔNG SỐ KỸ THUẬT Channel Type N Idss Drain-Source Cut-off Current 7.3 → 12mA Maximum Drain Source Voltage 15 V Maximum Drain Gate Vo...
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(Giá chưa VAT).0₫ON Semiconductor MMBFJ201 N-Channel JFET, Idss 0.3 → 1.5mA, 3-Pin SOT-23 [MMBFJ201]; 166-1840
ON SemiconductorTHÔNG SỐ KỸ THUẬT Channel Type N Idss Drain-Source Cut-off Current 0.3 → 1.5mA Maximum Gate Source Voltage -40 V Maximum Drain Gate V...
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