SQJB42EP-T1_GE3 Dual N-Channel MOSFET, 30 A, 40 V TrenchFET, 8-Pin SO Vishay [SQJB42EP-T1_GE3]; 134-9711
by Vishay
0₫
Mã kho: 1349711
Liên hệ để có giá tốt (Vietnam: 0898.332.898, E-mail: SKF@nguyenxuong.com)
THÔNG SỐ KỸ THUẬT | |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 30 A |
Maximum Drain Source Voltage | 40 V |
Package Type | SO |
Mounting Type | Surface Mount |
Pin Count | 8 |
Maximum Drain Source Resistance | 16 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 3.5V |
Minimum Gate Threshold Voltage | 2.5V |
Maximum Power Dissipation | 48 W |
Maximum Gate Source Voltage | -20 V, +20 V |
Number of Elements per Chip | 2 |
Forward Diode Voltage | 1.2V |
Maximum Operating Temperature | +175 °C |
Series | TrenchFET |
Height | 1.12mm |
Typical Gate Charge @ Vgs | 17 nC @ 10 V |
Length | 6.25mm |
Minimum Operating Temperature | -55 °C |
Automotive Standard | AEC-Q101 |
Width | 5.26mm |