SQJ960EP-T1_GE3 Dual N-Channel MOSFET, 8 A, 60 V, 8-Pin PowerPAK SO Vishay [SQJ960EP-T1_GE3]; 170-8296
by Vishay
0₫
Mã kho: 1708296
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 0.333333333333333 |
| Maximum Drain Source Voltage | 60 V |
| Package Type | PowerPAK SO |
| Mounting Type | Surface Mount |
| Pin Count | 8 |
| Maximum Drain Source Resistance | 84 mΩ |
| Channel Mode | Enhancement |
| Minimum Gate Threshold Voltage | 1.5V |
| Maximum Power Dissipation | 34 W |
| Transistor Configuration | Isolated |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 2 |
| Width | 4.47mm |
| Height | 1.14mm |
| Minimum Operating Temperature | -55 °C |
| Length | 5.25mm |
| Typical Gate Charge @ Vgs | 13 nC @ 10 V |
| Maximum Operating Temperature | +175 °C |
| Transistor Material | Si |