N-Channel 30 V (D-S) MOSFET with Schottk [SISS60DN-T1-GE3]; 188-5094
by Vishay
0₫
Mã kho: 1885094
Liên hệ để có giá tốt (Vietnam: 0898.332.898, E-mail: SKF@nguyenxuong.com)
| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 181.8 A |
| Maximum Drain Source Voltage | 30 V |
| Package Type | PowerPAK 1212-S |
| Mounting Type | Surface Mount |
| Pin Count | 8 |
| Maximum Drain Source Resistance | 2.01 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 2.5V |
| Minimum Gate Threshold Voltage | 1V |
| Maximum Power Dissipation | 65.8 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -12 V, +16 V |
| Number of Elements per Chip | 1 |
| Length | 3.3mm |
| Width | 3.3mm |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
| Height | 0.78mm |
| Typical Gate Charge @ Vgs | 57 nC @ 10 V |
| Forward Diode Voltage | 0.68V |