SIS415DNT-T1-GE3 P-Channel MOSFET, 22 A, 20 V, 8-Pin PowerPAK 1212 Vishay [SIS415DNT-T1-GE3]; 165-6920
by Vishay
0₫
Mã kho: 1656920
Liên hệ để có giá tốt (Vietnam: 0898.332.898, E-mail: SKF@nguyenxuong.com)
THÔNG SỐ KỸ THUẬT | |
---|---|
Channel Type | P |
Maximum Continuous Drain Current | 22 A |
Maximum Drain Source Voltage | 20 V |
Package Type | PowerPAK 1212 |
Mounting Type | Surface Mount |
Pin Count | 8 |
Maximum Drain Source Resistance | 9.5 mΩ |
Channel Mode | Enhancement |
Minimum Gate Threshold Voltage | 0.4V |
Maximum Power Dissipation | 52 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | -12 V, +12 V |
Number of Elements per Chip | 1 |
Length | 3.4mm |
Minimum Operating Temperature | -55 °C |
Transistor Material | Si |
Maximum Operating Temperature | +150 °C |
Height | 0.8mm |
Width | 3.4mm |
Typical Gate Charge @ Vgs | 117 nC @ 10 V |