SQD40061EL_GE3 P-Channel MOSFET, 100 A, 40 V TrenchFET, 3 + Tab-Pin DPAK Vishay Siliconix [SQD40061EL_GE3]; 178-3960
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Mã kho: 1783960
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THÔNG SỐ KỸ THUẬT | |
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Channel Type | P |
Maximum Continuous Drain Current | 100 A |
Maximum Drain Source Voltage | 40 V |
Package Type | TO-252 |
Mounting Type | Surface Mount |
Pin Count | 3 + Tab |
Maximum Drain Source Resistance | 10 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 2.5V |
Minimum Gate Threshold Voltage | 1.5V |
Maximum Power Dissipation | 107 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | ±20 V |
Number of Elements per Chip | 1 |
Width | 2.38mm |
Minimum Operating Temperature | -55 °C |
Forward Diode Voltage | 1.5V |
Transistor Material | Si |
Maximum Operating Temperature | +175 °C |
Series | TrenchFET |
Length | 6.73mm |
Typical Gate Charge @ Vgs | 185 nC @ 10 V |
Height | 6.22mm |