SiSH617DN-T1-GE3 P-Channel MOSFET, 35 A, 30 V TrenchFET, 8-Pin 1212 Vishay Siliconix [SiSH617DN-T1-GE3]; 178-3697
0₫
Mã kho: 1783697
Liên hệ để có giá tốt (Vietnam: 0898.332.898, E-mail: SKF@nguyenxuong.com)
| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | P |
| Maximum Continuous Drain Current | 35 A |
| Maximum Drain Source Voltage | 30 V |
| Package Type | 1212 |
| Mounting Type | Surface Mount |
| Pin Count | 8 |
| Maximum Drain Source Resistance | 20 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 2.5V |
| Minimum Gate Threshold Voltage | 1.2V |
| Maximum Power Dissipation | 52 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | ±25 V |
| Number of Elements per Chip | 1 |
| Minimum Operating Temperature | -55 °C |
| Width | 3.15mm |
| Transistor Material | Si |
| Height | 1.07mm |
| Forward Diode Voltage | 1.2V |
| Series | TrenchFET |
| Length | 3.15mm |
| Maximum Operating Temperature | +150 °C |
| Typical Gate Charge @ Vgs | 39 nC @ 10 V |