SiAA00DJ-T1-GE3 N-Channel MOSFET, 40 A, 25 V TrenchFET, 6-Pin SC-70 Vishay Siliconix [SiAA00DJ-T1-GE3]; 178-3669
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Mã kho: 1783669
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THÔNG SỐ KỸ THUẬT | |
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Channel Type | N |
Maximum Continuous Drain Current | 40 A |
Maximum Drain Source Voltage | 25 V |
Package Type | SC-70 |
Mounting Type | Surface Mount |
Pin Count | 6 |
Maximum Drain Source Resistance | 7 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 2.5V |
Minimum Gate Threshold Voltage | 1V |
Maximum Power Dissipation | 19.2 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | -12 V, +16 V |
Number of Elements per Chip | 1 |
Height | 1mm |
Width | 1.35mm |
Transistor Material | Si |
Maximum Operating Temperature | +150 °C |
Forward Diode Voltage | 1.2V |
Length | 2.2mm |
Typical Gate Charge @ Vgs | 15.7 nC @ 10 V |
Minimum Operating Temperature | -55 °C |
Series | TrenchFET |