SIHH26N60E-T1-GE3 N-Channel MOSFET, 25 A, 600 V E Series, 4-Pin PowerPAK Vishay [SIHH26N60E-T1-GE3]; 124-2251
by Vishay
0₫
Mã kho: 1242251
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 25 A |
| Maximum Drain Source Voltage | 600 V |
| Package Type | PowerPAK |
| Mounting Type | Surface Mount |
| Pin Count | 4 |
| Maximum Drain Source Resistance | 135 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 4V |
| Minimum Gate Threshold Voltage | 2V |
| Maximum Power Dissipation | 202 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -30 V, +30 V |
| Number of Elements per Chip | 1 |
| Length | 8.1mm |
| Minimum Operating Temperature | -55 °C |
| Transistor Material | Si |
| Height | 1mm |
| Forward Diode Voltage | 1.2V |
| Series | E Series |
| Typical Gate Charge @ Vgs | 77 nC |
| Maximum Operating Temperature | +150 °C |
| Width | 8.1mm |