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SiHG24N65E-GE3 N-Channel MOSFET, 24 A, 650 V E Series, 3-Pin TO-247AC Vishay [SiHG24N65E-GE3]; 768-9335
by Vishay
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Mã kho: 7689335
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THÔNG SỐ KỸ THUẬT | |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 24 A |
Maximum Drain Source Voltage | 650 V |
Package Type | TO-247AC |
Mounting Type | Through Hole |
Pin Count | 3 |
Maximum Drain Source Resistance | 145 mΩ |
Channel Mode | Enhancement |
Minimum Gate Threshold Voltage | 2V |
Maximum Power Dissipation | 250 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | -20 V, +20 V |
Number of Elements per Chip | 1 |
Transistor Material | Si |
Length | 15.87mm |
Minimum Operating Temperature | -55 °C |
Typical Gate Charge @ Vgs | 81 nC @ 10 V |
Width | 5.31mm |
Maximum Operating Temperature | +150 °C |
Height | 20.7mm |
Series | E Series |