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SIHB28N60EF-GE3 N-Channel MOSFET, 28 A, 600 V EF Series, 3-Pin D2PAK Vishay [SIHB28N60EF-GE3]; 177-7628
by Vishay
0₫
Mã kho: 1777628
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THÔNG SỐ KỸ THUẬT | |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 28 A |
Maximum Drain Source Voltage | 600 V |
Package Type | D2PAK (TO-263) |
Mounting Type | Surface Mount |
Pin Count | 3 |
Maximum Drain Source Resistance | 123 mΩ |
Channel Mode | Enhancement |
Minimum Gate Threshold Voltage | 2V |
Maximum Power Dissipation | 250 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | -30 V, +30 V |
Number of Elements per Chip | 1 |
Series | EF Series |
Height | 4.83mm |
Minimum Operating Temperature | -55 °C |
Width | 9.65mm |
Transistor Material | Si |
Forward Diode Voltage | 1.2V |
Length | 10.67mm |
Maximum Operating Temperature | +150 °C |
Typical Gate Charge @ Vgs | 80 nC @ 10 V |