SIHB22N60E-GE3 N-Channel MOSFET, 21 A, 600 V E Series, 3-Pin D2PAK Vishay [SIHB22N60E-GE3]; 768-9313
by Vishay
0₫
Mã kho: 7689313
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THÔNG SỐ KỸ THUẬT | |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 21 A |
Maximum Drain Source Voltage | 600 V |
Package Type | D2PAK (TO-263) |
Mounting Type | Surface Mount |
Pin Count | 3 |
Maximum Drain Source Resistance | 180 mΩ |
Channel Mode | Enhancement |
Minimum Gate Threshold Voltage | 2V |
Maximum Power Dissipation | 227 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | -20 V, +20 V |
Number of Elements per Chip | 1 |
Typical Gate Charge @ Vgs | 57 nC @ 10 V |
Width | 9.65mm |
Length | 10.67mm |
Minimum Operating Temperature | -55 °C |
Transistor Material | Si |
Maximum Operating Temperature | +150 °C |
Series | E Series |
Height | 4.83mm |