SI4599DY-T1-GE3 Dual N/P-Channel MOSFET, 4.7 A, 6.8 A, 40 V, 8-Pin SOIC Vishay [SI4599DY-T1-GE3]; 165-7255
by Vishay
0₫
Mã kho: 1657255
Liên hệ để có giá tốt (Vietnam: 0898.332.898, E-mail: SKF@nguyenxuong.com)
THÔNG SỐ KỸ THUẬT | |
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Channel Type | N, P |
Maximum Continuous Drain Current | 4.7 A, 6.8 A |
Maximum Drain Source Voltage | 40 V |
Package Type | SOIC |
Mounting Type | Surface Mount |
Pin Count | 8 |
Maximum Drain Source Resistance | 42.5 mΩ, 62 mΩ |
Channel Mode | Enhancement |
Minimum Gate Threshold Voltage | 1.2V |
Maximum Power Dissipation | 3 W, 3.1 W |
Transistor Configuration | Isolated |
Maximum Gate Source Voltage | -20 V, +20 V |
Number of Elements per Chip | 2 |
Maximum Operating Temperature | +150 °C |
Minimum Operating Temperature | -55 °C |
Width | 4mm |
Height | 1.55mm |
Typical Gate Charge @ Vgs | 11.7 nC @ 10 V, 25 nC @ 10 V |
Length | 5mm |
Transistor Material | Si |