SI1926DL-T1-GE3 Dual N-Channel MOSFET, 370 mA, 60 V, 6-Pin SOT-363 Vishay [SI1926DL-T1-GE3]; 145-2680
by Vishay
0₫
Mã kho: 1452680
Liên hệ để có giá tốt (Vietnam: 0898.332.898, E-mail: SKF@nguyenxuong.com)
| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 370 mA |
| Maximum Drain Source Voltage | 60 V |
| Package Type | SOT-363 (SC-88) |
| Mounting Type | Surface Mount |
| Pin Count | 6 |
| Maximum Drain Source Resistance | 3 Ω |
| Channel Mode | Enhancement |
| Minimum Gate Threshold Voltage | 1V |
| Maximum Power Dissipation | 510 mW |
| Transistor Configuration | Isolated |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 2 |
| Typical Gate Charge @ Vgs | 0.9 nC @ 10 V |
| Minimum Operating Temperature | -55 °C |
| Width | 1.35mm |
| Height | 1mm |
| Transistor Material | Si |
| Maximum Operating Temperature | +150 °C |
| Length | 2.2mm |