SI1029X-T1-GE3 Dual N/P-Channel MOSFET, 190 mA, 300 mA, 60 V, 6-Pin SOT-523 Vishay [SI1029X-T1-GE3]; 787-9055
by Vishay
0₫
Mã kho: 7879055
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N, P |
| Maximum Continuous Drain Current | 190 mA, 300 mA |
| Maximum Drain Source Voltage | 60 V |
| Package Type | SOT-523 (SC-89) |
| Mounting Type | Surface Mount |
| Pin Count | 6 |
| Maximum Drain Source Resistance | 3 Ω, 8 Ω |
| Channel Mode | Enhancement |
| Minimum Gate Threshold Voltage | 1V |
| Maximum Power Dissipation | 250 mW |
| Transistor Configuration | Isolated |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 2 |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
| Length | 1.7mm |
| Typical Gate Charge @ Vgs | 750 nC @ 4.5 V, 1700 nC @ 15 V |
| Transistor Material | Si |
| Height | 0.6mm |
| Width | 1.7mm |