TK56E12N1,S1X(S N-Channel MOSFET, 112 A, 120 V U-MOSVIII-H, 3-Pin TO-220 Toshiba [TK56E12N1,S1X(S]; 125-0578
by Toshiba
0₫
Mã kho: 1250578
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THÔNG SỐ KỸ THUẬT | |
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Channel Type | N |
Maximum Continuous Drain Current | 112 A |
Maximum Drain Source Voltage | 120 V |
Package Type | TO-220 |
Mounting Type | Through Hole |
Pin Count | 3 |
Maximum Drain Source Resistance | 7 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 4V |
Minimum Gate Threshold Voltage | 2V |
Maximum Power Dissipation | 168 W |
Maximum Gate Source Voltage | -20 V, +20 V |
Number of Elements per Chip | 1 |
Width | 4.45mm |
Series | U-MOSVIII-H |
Height | 15.1mm |
Length | 10.16mm |
Forward Diode Voltage | 1.2V |
Maximum Operating Temperature | +150 °C |
Transistor Material | Si |
Typical Gate Charge @ Vgs | 69 nC @ 10 V |