TK10A60W,S4VX(M N-Channel MOSFET, 9.7 A, 600 V DTMOSIV, 3-Pin TO-220SIS Toshiba [TK10A60W,S4VX(M]; 125-0532
by Toshiba
0₫
Mã kho: 1250532
Liên hệ để có giá tốt (Vietnam: 0898.332.898, E-mail: SKF@nguyenxuong.com)
| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 9.7 A |
| Maximum Drain Source Voltage | 600 V |
| Package Type | TO-220SIS |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 380 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 3.7V |
| Minimum Gate Threshold Voltage | 2.7V |
| Maximum Power Dissipation | 30 W |
| Maximum Gate Source Voltage | -30 V, +30 V |
| Number of Elements per Chip | 1 |
| Length | 10mm |
| Transistor Material | Si |
| Maximum Operating Temperature | +150 °C |
| Height | 15mm |
| Width | 4.5mm |
| Forward Diode Voltage | 1.7V |
| Series | DTMOSIV |
| Typical Gate Charge @ Vgs | 20 nC @ 10 V |